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Unit 9-Electronic Devices Lessons
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Post a LessonAnswered on 06 Apr Learn CBSE/Class 12/Science/Physics/Unit 9-Electronic Devices
Sadika
In a p-n junction, the width of the depletion layer changes depending on whether it is forward biased or reverse biased:
(i) Forward Biased:
(ii) Reverse Biased:
In summary, forward biasing reduces the width of the depletion layer, facilitating current flow, while reverse biasing increases the width of the depletion layer, limiting current flow.
Answered on 07 Apr Learn CBSE/Class 12/Science/Physics/Unit 9-Electronic Devices
Nazia Khanum
A p-n junction diode can be used as a half-wave rectifier to convert an alternating current (AC) signal into a pulsating direct current (DC) signal. In a half-wave rectifier circuit, the diode conducts current only when it is forward-biased (i.e., when the p-type material is connected to the positive terminal of the AC source and the n-type material is connected to the negative terminal of the AC source).
Here's how the circuit works:
AC Input Source: The AC input source provides the alternating current signal that needs to be rectified.
P-N Junction Diode (D): The p-n junction diode is connected in series with the load resistor (RL). The diode conducts current only when it is forward-biased.
Load Resistor (RL): The load resistor is connected in series with the diode to provide a path for the current to flow through when the diode is forward-biased.
Here's the circuit diagram:
AC Input Load Source Resistor | | | | | | V V ___ | ___ | | | | | |______| --| |---|---| |------|>-- |___| | |___| D | ___ ___ | | | | | | --| |------| |-------|-- |___| |___| | GND
Explanation:
During the positive half-cycle of the AC input signal, the p-terminal of the diode becomes positive and the n-terminal becomes negative. This forward-biases the diode, allowing current to flow through it and the load resistor, completing the circuit. As a result, current flows through the load resistor and we get an output voltage across the load resistor.
During the negative half-cycle of the AC input signal, the p-terminal of the diode becomes negative and the n-terminal becomes positive. This reverse-biases the diode, blocking current flow through it, and thus no current flows through the load resistor. As a result, there is no output voltage across the load resistor during the negative half-cycle.
So, at the output, we get a pulsating DC signal which is the positive half-cycles of the AC input signal. This is why it's called a half-wave rectifier, as it rectifies only one half of the input AC waveform.
Answered on 07 Apr Learn CBSE/Class 12/Science/Physics/Unit 9-Electronic Devices
Nazia Khanum
A photodiode is a semiconductor device that converts light into an electrical current. It is commonly operated under reverse bias for several reasons:
Increased Depletion Region: When a photodiode is reverse biased, the width of the depletion region increases. This widening of the depletion region allows for more efficient absorption of photons, enhancing the device's sensitivity to light.
Reduced Dark Current: Reverse biasing reduces the dark current of the photodiode. Dark current refers to the current that flows through the photodiode even when there is no light present. By operating under reverse bias, dark current is minimized, leading to better signal-to-noise ratio and improved performance in low-light conditions.
Faster Response Time: Reverse biasing can improve the response time of the photodiode. It reduces the capacitance of the photodiode, which in turn decreases the time it takes for the photodiode to respond to changes in incident light intensity.
Lower Noise: Reverse biasing helps in reducing the noise generated by the photodiode. This noise reduction contributes to better overall performance, especially in applications where precise measurements are required.
Linear Response: Reverse biasing allows for a more linear response of the photodiode to changes in incident light intensity over a wider range, making it suitable for applications requiring accurate light detection and measurement.
Overall, operating a photodiode under reverse bias enhances its performance in terms of sensitivity, response time, noise reduction, and linearity, making it suitable for various light detection applications such as in optical communication, light sensing, and imaging.
Asked on 06/12/2021 Learn CBSE/Class 12/Science/Physics/Unit 9-Electronic Devices
Answered 17 hrs ago Learn CBSE/Class 12/Science/Physics/Unit 9-Electronic Devices
Amogh KM
5 years of experience in academia. Teaching: Physics, Maths and Electronics
By merely mechanically joining two slabs of n-type and p-type materials, it does not ensure good electrical continuity between the two slabs. Let me re-iterate that: mechanical continuity or connection does not always mean good electrical connection and continuity. For one, electronic properties of a material are a strong function of the material properties. Material properties including defects and other artefacts at the atomic level strongly affect the electronic properties. A monocrystalline piece of Silicon (Or, Germanium, or any other host material) has ideal properties to create a good P-N junction. It is simply impossible to create a monocrystalline material by joining two chunks of silicon like that. It is much harder to create the perfect electrically continuous P-N junction in this manner than one may realise.
Imagine aligning two materials such that there's perfect match in orientation at the atomic level to create a monocrystalline block of material! Even if we ignore the elephant in the room and assume that somehow we can manage to get the two crystal orientations aligned to be within tolerance limits somehow, there are other factors that hold us back from "joining" them. A quote from Wolfgang Pauli is super famous in the materials and devices community - "God made the bulk; the surface was invented by the devil". One can produce/manufacture near-perfect bulk material, and predict its behaviour so well with theory, but the material's surfaces, are full of dangling bonds, chemically active sites that are often terminated with undesirable functional groups, and host impurities such as adsorbants, and what not! While surfaces can be deterministically studied, surfaces are SO much harder to engineer to the specifications we will need to achieve a P-N junction. While the idea of simply putting two slabs together is appealing and sounds easy, the challenges involved in engineering the surface to achieve the kind of electrical continuity we want is simply impossible. Maybe we can get some sort of P-N junction behaviour by ignoring some of these technicalities, the devices so formed wouldn't be upto specifications we have been able to achieve using alternate methods. Besides, manufacturing would be a bigger nightmare!
In the age of integrated circuits -- where we have BILLIONS of electronic devices and even more PN junctions in a square inch of monocrystalline silicon, manufacturing electrical components by processes such as "joining" n and p doped materials - it is simply not a scalable solution. We need scalable manufacturing techniques in those cases. But even for discreet elements which aren't a part of very large scale integrated circuits, we don't have to "join" two chunks of materials, because we have developed really good methods -- methods that are reproducable, controllable, and reliable -- to create P-N junctions in a single piece of silicon many decades ago. There is literally no reason for us to even attempt to join two disjoint pieces of n-type and p-type materials to create a P-N Junction. (For more information, you can read more about a technique called compensation doping, done through a process called ion implantation).
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