0INTEGRATED CIRCUITS Unit Topic Lectures Analog Integrated circuit Design: an overview: Current Mirrors using BJT and MOSFETs, Simple current Mirror, Base current compensated current Mirror, Wilson and Improved Wilson Current Mirrors, Widlar Current source and Cascode current Mirror The 741 IC Op-Amp: Bias circuit, short circuit protection circuitry, the input stage, the second stage, the output stage, and device parameters; DC Analysis of 741: Small Signal Analysis of input stage, the second stage, the output stage; Gain, Frequency Response of 741; a Simplified Model, Slew Rate, Relationship Between ft and SR 10 I II Linear Applications of IC op-amps: An Overview of Op-Amp (ideal and non-ideal) based Circuits V-I and I-V converters, generalized Impedance converter, simulation of inductors. Filters: First and second order LP, HP, BP BS and All pass active filters, KHN. 8 Digital Integrated Circuit Design-An Overview: CMOS Logic Gate Circuits: Basic Structure CMOS realization of Inverters, AND, OR, NAND and NOR Gates Latches and Flip flops: The Latch, The SR Flip-flop, CMOS Implementation of SR Flip- flops, A Simpler CMOS Implementation of the Clocked SR Flipflop, D Flip-flop Circuits. III 8 IV Non-Linear applications of IC Op-amps: Log– Anti Log Amplifiers, Precision Rectifiers, Peak Detectors, Simple and Hold Circuits, Analog Multipliers and their applications. Op-amp as a comparator, Zero crossing detector, Schmitt Trigger, Astable multivibrator, Monostable multivibrator, Generation of Triangular Waveforms 7 V D/A and A/D converters Integrated Circuit Timer: The 555 Circuit, Implementing a Monostable Multivibrator Using the 555 IC, Astable Multivibrator Using the 555 IC. Phase-locked loops (PLL): Ex-OR Gates and multipliers as phase detectors, Block Diagram of IC PLL, Working of PLL and Applications of PLL.
ADVANCE SEMICONDUCTOR DEVICES Unit Topics Lectures I Physics of Semiconductors, P-N Junction Diode and BJT: Introduction, Crystal Structure, Phonon, Optical, and Thermal Properties,p-n Junctions – Junction Breakdown, Transient Behavior and Noise Terminal Functions.BJT: Static Characteristics, Microwave Characteristics, Related Device Structures, Heterojunction Bipolar Transistor. 8 II MOSFET, Hetero-Junctions and Basics of Nanostructures: MOSFET: Basic Device Characteristics, Nonuniform Doping and Buried Channel Device, Device Scaling and Short-Channel Effects, MOSFET Structures, Circuit Applications, Single Electron Transistor, JFETs. Hetero-junctions: Metal-Semiconductor Contacts, Metal-insulator semiconductor Capacitors. MESFETs and MODFETs. Nanostructures: Basic Equations and Examples. 8 III TUNNEL Devices and IMPATT Diodes: TUNNEL DEVICES: Tunnel Diode, Related Tunnel Devices, Resonant Tunneling Diode. IMPATT Diodes: Static Characteristics, Dynamic Characteristics, Power and Efficiency Noise Behavior, Device Design and Performance, BARITT Diode, TUNNETT Diode 8 IV Power devices, Photonic devices: Transferred-Electron and Real-SpaceTransfer Devices Thyristors, Power Devices. Photonic Devices and Sensors: Radiative Transitions, Light-Emitting Diode (LED), Laser Physics, Laser Operating Characteristics, Specialty Lasers 8 V Photodetectors, Solar Cells and Sensors:Photodiodes, Avalanche Photodiode and Phototransistor, Charge-Coupled Device (CCD), MetalSemiconductor-Metal Photodetector, Quantum-Well Infrared Photodetector, Solar Cell Sensors: Thermal Sensor, Mechanical Sensors, Magnetic Sensors and Chemical Sensors.
